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SQJ942EP www.vishay.com vishay siliconix s13-0708-rev. b, 01-apr-13 1 document number: 62669 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive dual n-channel 40 v (d-s) 175 c mosfets features ?trenchfet ? power mosfet ? aec-q101 qualified d ?100 % r g and uis tested ? material categorization: for definitions of co mpliance please see www.vishay.com/doc?99912 notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" squa re pcb (fr4 material). d. parametric verification ongoing. e. see solder profile ( www.vishay.com/doc?73257 ). the powerpak so-8l is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequa te bottom side sold er interconnection. f. rework conditions: manual soldering with a soldering iron is not recommended for leadless components. product summary n-channel 1 n-channel 2 v ds (v) 40 40 r ds(on) ( ? ) at v gs = 10 v 0.022 0.011 r ds(on) ( ? ) at v gs = 4.5 v 0.026 0.013 i d (a) 15 45 configuration dual n bottom view d 1 d 2 1 2 3 4 s 1 g 1 s 2 g 2 6.15mm 5.13mm powerpak ? so-8l asymmetric n-channel 1 mosfet d 1 g 1 s 1 n-channel 2 mosfet d 2 g 2 s 2 ordering information package powerpak so-8l dual asymmetric lead (pb)-free and halo gen-free SQJ942EP-t1-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol n-cha nnel 1 n-channel 2 unit drain-source voltage v ds 40 40 v gate-source voltage v gs 20 continuous drain current a t c = 25 c i d 15 45 a t c = 125 c 15 32 continuous source curr ent (diode conduction) a i s 15 44 pulsed drain current b i dm 60 180 single pulse avalanche current l = 0.1 mh i as 19 27 single pulse avalanche energy e as 18.5 36.5 mj maximum power dissipation b t c = 25 c p d 17 48 w t c = 125 c 6 16 operating junction and storage temperature range t j , t stg - 55 to + 175 c soldering recommendations (peak temperature) e, f 260 thermal resistance ratings parameter symbol n-channel 1 n-channel 2 unit junction-to-ambient pcb mount c r thja 75 70 c/w junction-to-case (drain) r thjc 93.1
SQJ942EP www.vishay.com vishay siliconix s13-0708-rev. b, 01-apr-13 2 document number: 62669 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. specifications (t c = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a n-ch 1 40 - - v v gs = 0 v, i d = 250 a n-ch 2 40 - - gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a n-ch 1 1.3 1.8 2.3 v ds = v gs , i d = 250 a n-ch 2 1.3 1.8 2.3 gate-source leakage i gss v ds = 0 v, v gs = 20 v n-ch 1 - - 100 na n-ch 2 - - 100 zero gate voltage drain current i dss v gs = 0 v v ds 40 v n-ch 1 - - 1 a v gs = 0 v v ds = - 40 v n-ch 2 - - 1 v gs = 0 v v ds = 40 v, t j = 125 c n-ch 1 - - 50 v gs = 0 v v ds = 40 v, t j = 125 c n-ch 2 - - 50 v gs = 0 v v ds = 40 v, t j = 175 c n-ch 1 - - 150 v gs = 0 v v ds = 40 v, t j = 175 c n-ch 2 - - 150 on-state drain current a i d(on) v gs = 10 v v ds ?? 5 v n-ch 1 30 - - a v gs = 10 v v ds ?? 5 v n-ch 2 30 - - drain-source on-state resistance a r ds(on) v gs = 10 v i d = 7.8 a n-ch 1 - 0.018 0.022 ? v gs = 10 v i d = 10.1 a n-ch 2 - 0.009 0.011 v gs = 10 v i d = 7.8 a, t j = 125 c n-ch 1 - - 0.032 v gs = 10 v i d = 10.1 a, t j = 125 c n-ch 2 - - 0.017 v gs = 10 v i d = 7.8 a, t j = 175 c n-ch 1 - - 0.038 v gs = 10 v i d = 10.1 a, t j = 175 c n-ch 2 - - 0.020 v gs = 4.5 v i d = 7.1 a n-ch 1 - 0.022 0.026 v gs = 4.5 v i d = 9.3 a n-ch 2 - 0.011 0.013 forward transconductance b g fs v ds = 15 v, i d = 7.8 a n-ch 1 - 46 - s v ds = 15 v, i d = 10.1 a n-ch 2 - 73 - dynamic b input capacitance c iss v gs = 0 v v ds = 20 v, f = 1 mhz n-ch 1 - 647 809 pf v gs = 0 v v ds = 20 v, f = 1 mhz n-ch 2 - 1161 1451 output capacitance c oss v gs = 0 v v ds = 20 v, f = 1 mhz n-ch 1 - 105 131 v gs = 0 v v ds = 20 v, f = 1 mhz n-ch 2 - 178 222 reverse transfer capacitance c rss v gs = 0 v v ds = 20 v, f = 1 mhz n-ch 1 - 42 53 v gs = 0 v v ds = 20 v, f = 1 mhz n-ch 2 - 68 85 total gate charge c q g v gs = 10 v v ds = 20 v, i d = 16 a n-ch 1 - 13.1 19.7 nc v gs = 10 v v ds = 20 v, i d = 6 a n-ch 2 - 22.5 33.8 gate-source charge c q gs v gs = 10 v v ds = 20 v, i d = 16 a n-ch 1 - 2.12 - v gs = 10 v v ds = 20 v, i d = 6 a n-ch 2 - 3.35 - gate-drain charge c q gd v gs = 10 v v ds = 20 v, i d = 16 a n-ch 1 - 1.84 - v gs = 10 v v ds = 20 v, i d = 6 a n-ch 2 - 3.14 - gate resistance r g f = 1 mhz n-ch 1 1.5 3.02 5 ? n-ch 2 2.05 4.11 7
SQJ942EP www.vishay.com vishay siliconix s13-0708-rev. b, 01-apr-13 3 document number: 62669 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit turn-on delay time c t d(on) v dd = 20 v, r l = 20 ? i d ? 1 a, v gen = 10 v, r g = 1 ? n-ch 1 - 33 50 ns v dd = 20 v, r l = 20 ? i d ? 1 a, v gen = 10 v, r g = 1 ? n-ch 2 - 40 60 rise time c t r v dd = 20 v, r l = 20 ? i d ? 1 a, v gen = 10 v, r g = 1 ? n-ch 1 - 25 38 v dd = 20 v, r l = 20 ? i d ? 1 a, v gen = 10 v, r g = 1 ? n-ch 2 - 31 46 turn-off delay time c t d(off) v dd = 20 v, r l = 20 ? i d ? 1 a, v gen = 10 v, r g = 1 ? n-ch 1 - 29 43 v dd = 20 v, r l = 20 ? i d ? 1 a, v gen = 10 v, r g = 1 ? n-ch 2 - 52 78 fall time c t f v dd = 20 v, r l = 20 ? i d ? 1 a, v gen = 10 v, r g = 1 ? n-ch 1 - 12 18 v dd = 20 v, r l = 20 ? i d ? 1 a, v gen = 10 v, r g = 1 ? n-ch 2 - 16 24 source-drain diode ratings and characteristics b pulsed current a i sm n-ch 1 - - 60 a n-ch 2 - - 180 forward voltage v sd i s = 5.2 a n-ch 1 - 0.8 1.2 v i s = 6.8 a n-ch 2 - 0.8 1.2
SQJ942EP www.vishay.com vishay siliconix s13-0708-rev. b, 01-apr-13 4 document number: 62669 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 1 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current transfer characteristics transconductance capacitance 0 8 16 24 32 40 0 2 4 6 8 10 i d - drain current (a) v d s - drain-to- s ource voltage (v) v gs = 10 v thru 4 v v gs = 3 v 0 2 4 6 8 10 0 1 2 3 4 5 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = 25 c t c = - 55 c t c = 125 c 0.00 0.02 0.04 0.06 0.08 0.10 0 8 16 24 32 40 r d s (on) - on-re s i s tance () i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 8 16 24 32 40 0 1 2 3 4 5 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = - 55 c t c = 125 c t c = 25 c 0 15 30 45 60 75 0 2 4 6 8 10 g f s - tran s conductance ( s ) i d - drain current (a) t c = 125 c t c = - 55 c t c = 25 c 0 240 480 720 960 1200 0 8 16 24 32 40 c - capacitance (pf) v d s - drain-to- s ource voltage (v) c i ss ss ss
SQJ942EP www.vishay.com vishay siliconix s13-0708-rev. b, 01-apr-13 5 document number: 62669 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 1 typical characteristics (t a = 25 c, unless otherwise noted) gate charge source drain diode forward voltage threshold voltage on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage drain source breakdown vs . junction temperature 0 2 4 6 8 10 0 3 6 9 12 15 v gs - g ate-to- s ource voltage (v) q g - total g ate charge (nc) i d = 16 a v d s = 20 v 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 25 c t j = 150 c - 1.2 - 0.9 - 0.6 - 0.3 0.0 0.3 0.6 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th) variance (v) t j - temperature ( c) i d = 250 a i d = 5 ma 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 r d s (on) - on-re s i s tance (normalized) t j - junction temperature ( c) i d = 7.8 a v gs = 4.5 v v gs = 10 v 0.00 0.02 0.04 0.06 0.08 0.10 0246810 r d s (on) - on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 150 c t j = 25 c 40 42 44 46 48 50 - 50 - 25 0 25 50 75 100 125 150 175 v d s - drain-to- s ource voltage (v) t j - junction temperature ( c) i d = 1 ma
SQJ942EP www.vishay.com vishay siliconix s13-0708-rev. b, 01-apr-13 6 document number: 62669 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 1 typical characteristics (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d - drain current (a) v d s - drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified limited by r d s (on) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 m s , 1 s , 10 s , dc i d limited 10 - 3 10 - 2 1 10 600 10 - 1 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r th j a = 85 c/w 3. t jm - t a = p dm z th j a (t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
SQJ942EP www.vishay.com vishay siliconix s13-0708-rev. b, 01-apr-13 7 document number: 62669 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 1 typical characteristics (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal im pedance junction-to-case (25 c) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circ uit board - fr4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. 10 - 3 10 - 2 10 - 1 10 - 4 2 1 0.1 0.01 0.2 0.1 0.05 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance single pulse 0.02
SQJ942EP www.vishay.com vishay siliconix s13-0708-rev. b, 01-apr-13 8 document number: 62669 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 2 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current transfer characteristics transconductance capacitance 0 8 16 24 32 40 0 2 4 6 8 10 i d - drain current (a) v d s - drain-to- s ource voltage (v) v gs = 10 v thru 4 v v gs = 3 v 0.0 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 5 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = 25 c t c = - 55 c t c = 125 c 0.000 0.005 0.010 0.015 0.020 0.025 0 8 16 24 32 40 r d s (on) - on-re s i s tance () i d - drain current (a) v gs = 4.5 v v gs = 10 v 0 8 16 24 32 40 0 1 2 3 4 5 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = - 55 c t c = 125 c t c = 25 c 0 20 40 60 80 100 0 3 6 9 12 15 g f s - tran s conductance ( s ) i d - drain current (a) t c = 125 c t c = - 55 c t c = 25 c 0 400 800 1200 1600 2000 0 8 16 24 32 40 c - capacitance (pf) v d s - drain-to- s ource voltage (v) c i ss ss ss
SQJ942EP www.vishay.com vishay siliconix s13-0708-rev. b, 01-apr-13 9 document number: 62669 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 2 typical characteristics (t a = 25 c, unless otherwise noted) gate charge source drain diode forward voltage threshold voltage on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage drain source breakdown vs . junction temperature 0 2 4 6 8 10 0 5 10 15 20 25 v gs - g ate-to- s ource voltage (v) q g - total g ate charge (nc) i d = 6 a v d s = 20 v 0.001 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 25 c t j = 150 c - 1.2 - 0.9 - 0.6 - 0.3 0.0 0.3 0.6 - 50 - 25 0 25 50 75 100 125 150 175 v gs (th) variance (v) t j - temperature ( c) i d = 250 a i d = 5 ma 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 175 r d s (on) - on-re s i s tance (normalized) t j - junction temperature ( c) i d = 10.1 a v gs = 4.5 v v gs = 10 v 0.00 0.01 0.02 0.03 0.04 0.05 0246810 r d s (on) - on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 150 c t j = 25 c 40 42 44 46 48 50 52 - 50 - 25 0 25 50 75 100 125 150 175 v d s - drain-to- s ource voltage (v) t j - junction temperature ( c) i d = 1 ma
SQJ942EP www.vishay.com vishay siliconix s13-0708-rev. b, 01-apr-13 10 document number: 62669 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 2 typical characteristics (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d - drain current (a) v d s - drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified limited by r d s (on) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 m s , 1 s , 10 s , dc i d limited 10 - 3 10 - 2 1 10 600 10 - 1 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r th j a = 85 c/w 3. t jm - t a = p dm z th j a (t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
SQJ942EP www.vishay.com vishay siliconix s13-0708-rev. b, 01-apr-13 11 document number: 62669 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 2 typical characteristics (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal im pedance junction-to-case (25 c) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circ uit board - fr4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62669 . 10 - 3 10 - 2 10 - 1 10 - 4 2 1 0.1 0.01 0.2 0.1 0.05 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance single pulse 0.02
package information www.vishay.com vishay siliconix revision: 12-nov-12 1 document number: 62714 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 powerpak ? so-8l assymetric case outline note ? millimeters will gover dim. millimeters inches min. nom. max. min. nom. max. a 1.00 1.07 1.14 0.039 0.042 0.045 a1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 typ. 0.004 typ. b4 0.64 typ. 0.025 typ c 0.20 0.25 0.30 0.008 0.010 0.012 d 5.00 5.13 5.25 0.197 0.202 0.207 d1 4.80 4.90 5.00 0.189 0.193 0.197 d2 3.63 3.73 3.83 0.142 0.146 0.150 d3 0.81 0.91 1.01 0.032 0.036 0.040 d4 1.98 2.08 2.18 0.078 0.082 0.086 d5 1.47 1.57 1.67 0.058 0.062 0.066 e 1.27 bsc 0.050 bsc e 6.05 6.15 6.25 0.238 0.242 0.246 e1 4.27 4.37 4.47 0.168 0.172 0.176 e2 2.75 2.85 2.95 0.108 0.112 0.116 e3 1.89 1.99 2.09 0.074 0.078 0.082 f - - 0.15 - - 0.006 l 0.62 0.72 0.82 0.024 0.028 0.032 l1 0.92 1.07 1.22 0.036 0.042 0.048 k 0.51 typ. 0.020 typ. k1 0.74 typ. 0.029 typ. w 0.23 typ. 0.009 typ. w1 0.41 typ. 0.016 typ. w2 2.82 typ. 0.111 typ. w3 2.96 typ. 0.117 typ. w4 0.51 typ. 0.020 typ. ? 0 - 10 0 - 10 ecn: c12-1157-rev. b, 12-nov-12 dwg: 6009 a1 b b1 e d1 e1 l1 b2 l1 e d l 0.25 g auge line a c w d2 d4 d3 e2 w1 w2 w3 b3 b4 k f k1 e3 d5 w4 pin 1 pin 1
pad pattern www.vishay.com vishay siliconix revision: 07-mar-13 1 document number: 64477 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 recommended minimum pads for powerpak ? so-8l dual asymmetric recommended minimum pad s dimen s ion s in mm [inche s ]
legal disclaimer notice www.vishay.com vishay revision: 02-oct-12 1 document number: 91000 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vish ays terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vi shay product could result in personal injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized vishay personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of vishay. product names and markings noted herein may be trad emarks of their respective owners. material category policy vishay intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.

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